Semiconductor growth process

A semiconductor growth process wherein a plurality of layers each consisting of a different kind of semiconductor material are grown, comprising the steps of:

• heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started;
• supplying a first material gas to a surface of said substrate to cause a growth of said first semiconductor layer after said substrate is heated to said first growth starting temperature;
• cooling said substrate to a temperature below said first growth starting temperature and below a following second growth starting temperature, and at the same time, stopping the supply of said first material gas, to stop the growth of said first semiconductor layer;
• reheating said substrate to said second growth starting temperature, at which a growth of a second semiconductor layer can be started;
• and
• supplying a second material gas to the surface of said substrate to cause a growth of said second semiconductor layer after said substrate is reheated to said second growth starting temperature.