Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition

A method for manufacturing on substrate a p-type compound semiconductor thin film containing a III-group element of at least one of Ga and Al and a V-group element of As by metal organics chemical vapor deposition, comprising the steps of:

• selecting an alkylated compound having a methyl group as a raw material gas of the III-group element compound;
• selecting a hydrogenated compound as a raw material gas of the V-group element compound;
• setting growing conditions including a molar ratio (V/III) of the V-group element supply rate to the III-group element supply rate in order to grow the film on the substrate housed in a reactor so as to bring about growth of a crystal having a mirror-like surface, said molar ratio being within a range such that the growth rate of the film depends on the supply rate of the hydrogenated compound of the V-group element;
• and
• introducing said raw material gases into the reactor to epitaxially grow the film on the substrate.

A method for manufacturing on a substrate a p-type compound semiconductor thin film containing a III-group element of at least one of Ga and Al and a V-group element of As by metal organics chemical vapor deposition, comprising the steps of:

• selecting an alkylated compound having a methyl group as a raw material gas of the III-group element compound;
• selecting a hydrogenated compound as a raw material gas of the V-group element compound;
• setting a molar ratio (V/VIII) of the V-group element supply rate to the III-group element supply rate to fall within the range of between 0.3 and 2.5 in order to grow the film on the substrate housed in a reactor;
• and
• introducing said raw material gases into the reactor to epitaxially grow the film on the substrate.