Y10S 148/009
Bi-mos
Official title: Bi-MOS
Y10S148/009 (Bi-mos) appears on 185 US grants and 5 published applications in this corpus.
Search patents in Y10S- Granted patents
- 185
- Published applications
- 5
- Assignees
- 62
- Inventors
- 287
- Latest grant
- 10 Jul 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 10 | 0 |
| 1990 | 7 | 0 |
| 1991 | 19 | 0 |
| 1992 | 23 | 0 |
| 1993 | 20 | 0 |
| 1994 | 21 | 0 |
| 1995 | 19 | 0 |
| 1996 | 17 | 0 |
| 1997 | 15 | 0 |
| 1998 | 12 | 0 |
| 1999 | 8 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 1 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Bipolar transistors with resistors10 Jul 2012US 8,217,426 B2Texas Instruments Incorporated
- Methods of forming semiconductor constructions1 Apr 2008US 7,351,620 B2Micron Technology, Inc.
- Memory devices and electronic systems comprising integrated bipolar and FET devices11 Apr 2006US 7,026,690 B2Micron Technology, Inc.
- Memory cell constructions comprising integrated bipolar and FET devices29 Mar 2005US 6,873,018 B2Micron Technology, Inc.
- Integrated circuit structure having a bipolar transistor with a thick base oxide and a field effect transistor with a thin gate oxide20 Feb 2001US 6,191,457 B1Texas Instruments Incorporated
- Bipolar transistors with resistors15 Jul 2010US 2010/0178740 A1Texas Instruments Incorporated
- Bipolar transistors with resistors23 Apr 2009US 2009/0101988 A1Texas Instruments Incorporated
- Methods of forming semiconductor constructions29 Jun 2006US 2006/0141687 A1Micron Technology, Inc.
- Memory devices and electronic systems comprising integrated bipolar and FET devices12 Aug 2004US 2004/0155298 A1Micron Technology, Inc.
- Memory devices and electronic systems comprising integrated bipolar and FET devices12 Aug 2004US 2004/0155299 A1Micron Technology, Inc.
Most cited
By later US patents
- Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate145US 4,855,245 ASiemens Aktiengesellschaft · 1989
- BiCMOS process and process for forming bipolar transistors on wafers also containing FETs128US 4,987,089 AMicron Technology, Inc. · 1991
- BICDMOS structures126US 5,426,328 ASiliconix Incorporated · 1995
- Process of making BiCMOS devices having closely spaced device regions77US 5,015,594 AInternational Business Machines Corporation · 1991
- Method of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductors74US 5,223,449 A1993