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US 5,223,449 AGranted
Method of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductors
OwnerFrancis J. Morris, Donald L. Plumton +2inventors
InventorsFrancis J. Morris, Donald L. Plumton, Jau-Yuann Yang, Han-Tzong Yuan
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Abstract
Integrated circuits and fabrication methods incorporating both NPN (192, 194, 210) and PNP (196, 121, 124) heterojunction bipolar transistors together with N channel (198, 200, 216, 218) and P channel (202, 204, 220, 222) JFETs on a single substrate as illustrated in FIG. 10. MESFETs may be also be integrated on the substrate.
Claims16
A method of fabricating an integrated circuit, comprising the steps of:
- (a) providing a first layer of a group III-V semiconductor material;
- (b) implanting dopants of a first conductivity type into spaced apart regions of said first layer of semiconductor material;
- (c) forming a second layer of group III-V semiconductor material of opposite conductivity type on said first layer;
- (d) forming at least two transistors of different types taken from the group consisting of NPN heterojunction bipolar, PNP heterojunction bipolar, N-channel field effect and P-channel field effect, each of said transistors including a region of said implanted dopants and a region of said second layer;
- and
- (d) forming an electrical coupling between said transistors.
3 more elements
Dependencies are inferred from the claim text.