Y10S 148/024
Defect control-gettering and annealing
Y10S148/024 (Defect control-gettering and annealing) appears on 79 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 79
- Published applications
- 0
- Assignees
- 45
- Inventors
- 171
- Latest grant
- 12 Sep 2000
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 4 | 0 |
| 1978 | 4 | 0 |
| 1979 | 6 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 6 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 5 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 6 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Modification of interfacial fields between dielectrics and semiconductors12 Sep 2000US 6,117,749 ANational Semiconductor Corporation
- Silicon wafer having plasma CVD gettering layer with components/composition changing in depth-wise direction and method of manufacturing the silicon wafer7 Dec 1999US 5,998,283 AShin-Etsu Handotai Co., Ltd.
- Method of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a device2 Nov 1999US 5,976,956 AAdvanced Micro Devices, Inc.
- Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers16 Mar 1999US 5,882,989 AMEMC Electronic Materials, Inc.
- Impurity gettering in silicon using cavities formed by helium implantation and annealing24 Nov 1998US 5,840,590 ASandia Corporation
No published applications in this class yet.
Most cited
By later US patents
- Method for producing patterning alignment marks in oxide269US 5,478,762 ATaiwan Semiconductor Manufacturing Company.Ltd · 1995
- Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing169US 4,617,066 AHughes Aircraft Company · 1986
- Method for photo annealing non-single crystalline semiconductor films124US 4,888,305 ASemiconductor Energy Laboratory Co.Ltd. · 1989
- Method to getter contamination in semiconductor devices118US 5,244,819 AHoneywell Inc. · 1993
- Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment106US 4,314,595 AVLSI Technology Research Association · 1982