Method for photo annealing non-single crystalline semiconductor films
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Abstract
An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
Claims4
In a method of preparing non-single-crystalline semiconductor films, the steps comprising:
- forming a non-single-crystalline semiconductor film including silicon and hydrogen on a substrate by plasma or photo CVD deposition of a gaseous compound of silicon and hydrogen;
- effecting, under a vacuum, photo-annealing of said semiconductor film in order to regenerate dangling bonds by breaking the bonds between the silicon and hydrogen under said vacuum;
- introducing a neutralizing agent selected from the group consisting of oxygen, fluorine, chlorine, and nitrogen after producing said dangling bonds to terminate the dangling bonds with the neutralizing agent.
Dependencies are inferred from the claim text.