Y10S 148/072
Heterojunctions
Y10S148/072 (Heterojunctions) appears on 299 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 299
- Published applications
- 0
- Assignees
- 113
- Inventors
- 477
- Latest grant
- 10 Apr 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 36 | 0 |
| 1977 | 13 | 0 |
| 1978 | 9 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 6 | 0 |
| 1982 | 5 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 5 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 10 | 0 |
| 1989 | 25 | 0 |
| 1990 | 26 | 0 |
| 1991 | 23 | 0 |
| 1992 | 20 | 0 |
| 1993 | 18 | 0 |
| 1994 | 24 | 0 |
| 1995 | 18 | 0 |
| 1996 | 14 | 0 |
| 1997 | 10 | 0 |
| 1998 | 6 | 0 |
| 1999 | 6 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Integrated circuit capable of low-noise and high-power microwave operation10 Apr 2001US 6,215,136 B1Texas Instruments Incorporated
- Process of fabricating photodiode integrated with MOS device7 Mar 2000US 6,033,232 APowerchip Semiconductor Corp.
- Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same15 Feb 2000US 6,025,615 ATexas Instruments Incorporated
- Self-aligned base ohmic metal for an HBT device cross-reference to related applications30 Nov 1999US 5,994,194 ATRW Inc.
- Method of making heterojunction bipolar structure having air and implanted isolations24 Aug 1999US 5,943,577 ANEC Corporation
No published applications in this class yet.
Most cited
By later US patents
- Method for producing compound thin films1,267US 4,058,430 A1977
- High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions298US 5,192,987 AAPA Optics, Inc. · 1993
- Method of making a high electron mobility transistor204US 5,296,395 AAPA Optics, Inc. · 1994
- Method of making a superlattice heterojunction bipolar device179US 4,937,204 ASony Corporation · 1990
- Monolithic integration of silicon and gallium arsenide devices178US 4,774,205 AMassachusetts Institute of Technology · 1988