Y10S 148/096
Lateral transistor
Y10S148/096 (Lateral transistor) appears on 40 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 40
- Published applications
- 0
- Assignees
- 17
- Inventors
- 58
- Latest grant
- 6 Jul 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 6 | 0 |
| 1996 | 6 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- CMOS OP-AMP circuit using BJT as input stage6 Jul 1999US 5,920,111 ATaiwan Semiconductor Manufacturing Company.Ltd
- Method of fabricating a silicon BJT10 Feb 1998US 5,716,859 AThe Whitaker Corporation
- Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology6 Jan 1998US 5,705,839 ATaiwan Semiconductor Manufacturing Company.Ltd
- Method of fabricating an integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistors21 Oct 1997US 5,679,587 AConsorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
- CMOS process compatible self-alignment lateral bipolar junction transistor23 Sep 1997US 5,670,822 AWinbond Electronics Corp.
No published applications in this class yet.
Most cited
By later US patents
- Process for producing NPN type lateral transistor with minimal substrate operation interference54US 4,437,226 ARockwell International Corporation · 1984
- Lateral double diffused insulated gate field effect transistor fabrication process43US 5,306,652 ATexas Instruments Incorporated · 1994
- Process for making a lateral bipolar transistor in a standard CSAG process41US 4,669,177 ATexas Instruments Incorporated · 1987
- Resurf lateral double diffused insulated gate field effect transistor36US 5,406,110 ATexas Instruments Incorporated · 1995
- Oxide isolated integrated injection logic with selective guard ring29US 3,962,717 AFairchild Camera and Instrument Corporation · 1976