Resurf lateral double diffused insulated gate field effect transistor

A reduced surface field lateral double diffused insulated gate field effect transistor formed on a semiconductor layer of a first conductivity type comprising:

• a thin epitaxial layer of a second conductivity type opposite said first conductivity type and formed on the semiconductor layer;
• a drift region of said second conductivity type formed at a face of said thin epitaxial layer extending through said thin epitaxial layer to the semiconductor layer and having a higher dopant concentration than said thin epitaxial layer;
• a thick insulator layer formed on said drift region;
• a body of the first conductivity type formed adjacent said drift region at said face of said thin epitaxial layer extending through said thin epitaxial layer to the semiconductor layer and having a higher dopant concentration than the semiconductor layer;
• a source region of said second conductivity type formed laterally within said body at said face of said thin epitaxial layer defining a channel region within said body between said source region and said drift region;
• a conductive gate insulatively disposed over said body extending between said source region and said thick insulator layer to control conductance of said channel region;
• and
• a drain region of said second conductivity type formed at said face of said thin epitaxial layer adjacent said drift region and having a higher dopant concentration than said drift region.