Y10S 148/139
Schottky barrier
Y10S148/139 (Schottky barrier) appears on 74 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 74
- Published applications
- 0
- Assignees
- 45
- Inventors
- 129
- Latest grant
- 9 Nov 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 5 | 0 |
| 1981 | 6 | 0 |
| 1982 | 4 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Vertical polysilicon diode compatible with CMOS/BiCMOS integrated circuit processes9 Nov 1999US 5,982,021 AChartered Semiconductor Manufacturing Ltd.
- Method for manufacturing a semiconductor device with stabilization of a bipolar transistor and a schottky barrier diode20 Jul 1999US 5,926,705 ANEC Corporation
- Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation10 Feb 1998US 5,716,880 AChartered Semiconductor Manufacturing Pte Ltd.
- Method for forming electrode on semiconductor11 Mar 1997US 5,610,097 AAgency of Industrial Science & Technology, Ministry of International Trade & Industry
- Method for making a nonvolatile memory device utilizing a field effect transistor having a ferroelectric gate film8 Oct 1996US 5,563,081 ARohm Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Thin film field effect transistor and method of making same228US 4,769,338 AEnergy Conversion Devices, Inc. · 1988
- Method of making a self-aligned MESFET using a substitutional gate with side walls86US 4,745,082 AFord Microelectronics, Inc. · 1988
- Method of making a gallium arsenide field effect transistor80US 4,545,109 ARCA Corporation · 1985
- Method for manufacturing a semiconductor device utilizing self-aligned silicide regions71US 4,622,735 ATokyo Shibaura Denki Kabushiki Kaisha · 1986
- Method of making metal-insulator-metal junction structures with adjustable barrier heights48US 5,019,530 AInternational Business Machines Corporation · 1991