Thin film field effect transistor and method of making same
AssigneeEnergy Conversion Devices, Inc.
InventorsStanford R. Ovshinsky, Stephen J. Hudgens
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Abstract
There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
Claims30
A method of making a thin film field effect transistor comprising the steps of:
- forming a body of semiconductor material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material;
- forming a source and a drain on the semiconductor material and in rectifying contact with said semiconductor material;
- and
- forming a gate electrode adjacent to and insulated from said body of semiconductor material.
Dependencies are inferred from the claim text.