Method for forming electrode on semiconductor
AssigneeAgency of Industrial Science & Technology, Ministry of International Trade & Industry
InventorTakashi Shimizu
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Abstract
A method for forming electrodes on a semiconductor includes introducing at least one reactive oxidizing gas selected from the group consisting of ozone, atomic oxygen, nitrogen dioxide, oxygen ion and oxygen plasma to an oxide semiconductor surface and depositing electrode material on the oxide semiconductor surface without exposing the surface to the outside atmosphere.
Claims2
A method for forming electrodes on a semiconductor, comprising introducing at least one reactive oxidizing gas selected from the group consisting of ozone, atomic oxygen, nitrogen dioxide, oxygen ion and oxygen plasma to an oxide semiconductor surface and depositing electrode material on the oxide semiconductor surface without atmospheric exposure of the surface.
Dependencies are inferred from the claim text.