Method for manufacturing a semiconductor device utilizing self-aligned silicide regions

A method for manufacturing a semiconductor device, comprising the following steps in the following order:

• (a) forming a gate insulating film on a surface of a silicon substrate, and a gate electrode on said gate insulating film;
• (b) forming a source region and a drain region by doping said substrate with an impurity which has a conductivity type opposite to a conductivity type of said silicon substrate;
• (c) forming an insulating layer covering the entire surface of said substrate and etching the insulating layer by an anisotropic etching, thus leaving the self-aligned insulating layer on the side walls of said gate electrode;
• (d) depositing a metal on the entire surface, forming a metal silicide film on the silicon surface by reacting silicon with the metal which is in contact with the silicon, and eliminating unreacted metal, thus forming self-aligned metal silicide films on regions on which an insulating film is not formed, said region including said source region and said drain region;
• and
• (e) forming electrodes which are connected to the source region, drain region and gate electrode.