Y10S 148/111
Narrow masking
Y10S148/111 (Narrow masking) appears on 56 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 56
- Published applications
- 0
- Assignees
- 39
- Inventors
- 78
- Latest grant
- 27 Jan 1998
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 8 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of forming a microelectronic device having a cavity smaller than lithographic tolerances27 Jan 1998US 5,712,182 ATexas Instruments Incorporated
- Method of fabricating a deep submicron MOSFET device using a recessed, narrow polysilicon gate structure30 Dec 1997US 5,702,967 AVanguard International Semiconductor Corporation
- Microelectronic device with centered storage capacitor cavity sized less than feature size18 Feb 1997US 5,604,659 ATexas Instruments Incorporated
- Intermediate structure for forming a storage capacitor23 Jul 1996US 5,539,612 ATexas Instruments Incorporated
- Method for forming narrow contact holes of a semiconductor device23 Apr 1996US 5,510,286 AHyundai Electronics Industries Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Process for forming sub-micrometer patterns using silylation of resist side walls88US 4,803,181 AInternational Business Machines Corporation · 1989
- Process for making large area isolation trenches utilizing a two-step selective etching technique73US 4,211,582 AInternational Business Machines Corporation · 1980
- Method of manufacturing a DMOS66US 4,879,254 ANippondenso Co., Ltd. · 1989
- Method for fabricating ultra-narrow metallic lines58US 4,093,503 AInternational Business Machines Corporation · 1978
- Pretreatment of photoresist masking layers resulting in higher temperature device processing54US 4,253,888 AMatsushita Electric Industrial Co., Ltd. · 1981