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US 4,253,888 AGranted
Pretreatment of photoresist masking layers resulting in higher temperature device processing
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorKazuya Kikuchi
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Abstract
Method for the production of an LSI circuit device, in which method an organic compound film such as photoresist films is suitably treated to become a heat resistant film and it is used in various production processes as a mask pattern at a temperature of more than 200.degree. C. without deforming the original size of the mask pattern.
Claims34
A method of making a semiconductor device comprising the steps of:
- (1) forming a photoresist film pattern having a predetermined shape on a principal face of a semiconductor substrate,
- (2) hardening said photoresist film pattern by changing the physical property of at least the exposed surface thereof, and
- (3) forming an impurity region in said semiconductor substrate in a diffusion process by using said hardened photoresist film pattern as a diffusion mask at a temperature higher than a heat resistant temperature of the photoresist film pattern formed in step (1).
A method of making a semiconductor device comprising:
- (1) forming a photoresist film pattern within a predetermined pattern on a principal face of a semiconductor substrate,
- (2) hardening said photoresist film pattern by changing the physical property of at least the exposed surface thereof,
- (3) forming a deposition coating film both on said hardened photoresist film pattern and on said semiconductor substrate, and
- (4) removing said hardened photoresist film pattern and said deposition coating film thereon thus providing a pattern of said deposition coating film opposite to that of said photoresist film.
1 more element
A method of making a semiconductor device comprising the steps of:
- (1) forming a first photoresist film pattern in a predetermined pattern on a principal face of a semiconductor substrate,
- (2) hardening the thus formed photoresist film pattern by changing the physical property of at least the exposed surface thereof,
- (3) forming a deposition coating film both on said hardened photoresist film pattern and on said semiconductor substrate,
- (4) forming a second photoresist film having a pattern opposite to that of said first photoresist film,
- (5) etching away said deposition coating film on said hardened photoresist film pattern using said second photoresist film pattern as an etching mask, and thereafter
- (6) removing said hardened first photoresist film pattern and said second photoresist film pattern.
3 more elements
A method of making a semiconductor device comprising the steps of:
- (1) forming a photoresist film in a predetermined pattern on a principal face of a semiconductor substrate,
- (2) hardening said photoresist film pattern by changing the physical property of at least the exposed surface thereof,
- (3) forming an impurity-doped deposition coating film on said hardened photoresist film pattern and said semiconductor substrate,
- (4) diffusing the impurities contained in said impurity-doped deposition coating film into said semiconductor substrate to obtain a diffusion layer using a high temperature heat treatment, and
- (5) removing at least said hardened photoresist film pattern from among the layers formed on said semiconductor substrate.
2 more elements
A method of making a semiconductor device comprising the steps of:
- (1) forming a photoresist film pattern having a predetermined shape on a principal face of a semiconductor substrate,
- (2) hardening the thus applied photoresist film pattern by changing the physical property of at least the exposed surface thereof,
- (3) forming a conductive film over the entire surface of said semiconductor substrate and said hardened photoresist film pattern,
- (4) heat treating the hardened photoresist film pattern to vesicate said hardened photoresist film pattern, and
- (5) removing said vesicated and hardened photoresist film pattern together with said conductive film thereon leaving on said substrate a pattern of said conductive film.
2 more elements
A method of making a semiconductor device comprising the sequential steps of:
- (1) forming a photoresist film pattern having a predetermined shape on a principal face of a semiconductor substrate,
- (2) hardening said photoresist film pattern by changing the physical property of at least the exposed surface thereof, and
- (3) forming a coating film pattern on said semiconductor substrate at a processing temperature higher than the heat resistant temperature of the photoresist film pattern formed in step 1 prior to said hardening using said hardened photoresist film pattern at a heat treatment step.
A method of making a semiconductor device comprising the successive steps of:
- (1) forming a photoresist film pattern having a predetermined shape on a principal face of a semiconductor substrate,
- (2) hardening said photoresist film pattern by changing the physical property of at least the exposed surface thereof, and
- (3) forming an impurity region in said semiconductor substrate by using said hardened photoresist film pattern as a diffusion mask in a diffusion process at a temperature higher than the heat resistant temperature of the photoresist film pattern formed in step 1 before said hardening step.
Dependencies are inferred from the claim text.