Intermediate structure for forming a storage capacitor
AssigneeTexas Instruments Incorporated
InventorSudhir K. Madan
Life of this patent
Estimating the term…
Abstract
A method for forming a storage capacitor (12) including the step of forming a storage node contact window (38) and forming a cavity (48) in the storage electrode (50) such that the capacitive area includes the sidewalls of the storage electrode and the cavity in the storage electrode. The capacitor is completed by forming a dielectric layer (54) over the storage electrode (50) and forming a conductive layer (56) over the dielectric layer (54) to act as a plate electrode capacitively-coupled to the storage electrode (50) through the dielectric layer (54). Other devices, systems and methods are also disclosed.
Claims2
An intermediate structure for forming a microelectronic device, said intermediate structure comprising:
- a) a substrate including a conductive region;
- b) an insulating layer overlying said substrate, said insulating layer having a storage node contact window overlying a selected area of said conductive region;
- c) a conductive layer overlying said insulating layer;
- d) a masking layer having a window defined therein, said window approximately above said conductive region of said substrate, said masking layer operable to prevent the etching of said conductive layer from areas underlying said masking layer such that a cavity may be defined in said conductive layer whereby a storage electrode having a cavity may be formed, wherein said window in said masking layer has a dimension that is less than a minimum lithographic feature.
Dependencies are inferred from the claim text.