Y10S 148/168
V-grooves
Official title: V-Grooves
Y10S148/168 (V-grooves) appears on 52 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 52
- Published applications
- 0
- Assignees
- 29
- Inventors
- 81
- Latest grant
- 16 Mar 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 7 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Fabrication method for horizontal direction semiconductor PN junction array16 Mar 1999US 5,882,950 AKorea Institute of Science and Technology
- Method of forming a capacitor19 May 1998US 5,753,558 AMicron Technology, Inc.
- Semiconductor processing method employing an angled sidewall19 Aug 1997US 5,658,818 AMicron Technology, Inc.
- Method for formation of a well in a dielectrically isolated island11 Feb 1997US 5,602,054 AHarris Corporation
- LDMOS transistor with reduced projective area of source region16 Apr 1996US 5,508,547 AUnited Microelectronics Corp.
No published applications in this class yet.
Most cited
By later US patents
- Grooved DMOS process with varying gate dielectric thickness209US 4,914,058 ASiliconix Incorporated · 1990
- Method for forming isolated regions of silicon utilizing reactive ion etching158US 4,104,086 AInternational Business Machines Corporation · 1978
- Method of forming a capacitor138US 5,444,013 AMicron Technology, Inc. · 1995
- Method of forming a silicon-based semiconductor optical device mount96US 5,024,966 AAT&T Bell Laboratories · 1991
- VMOS Floating gate memory device64US 4,222,062 AAmerican Microsystems, Inc. · 1980