Fabrication method for horizontal direction semiconductor PN junction array
AssigneeKorea Institute of Science and Technology
InventorsSuk-Ki Min, Seong-Il Kim, Eun Kyu Kim
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Abstract
A fabrication method for a horizontal direction semiconductor PN junction array which can be achieved when an epitaxial layer is grown by a metalorganic chemical vapor deposition (MOCVD method) by introducing (or doping) a small amount of CCl.sub.4 or CBr.sub.4 gas, includes forming a recess on an N type GaAs substrate by using a non-planar growth, performing a growth method of a P type epitaxial layer on the N type GaAs substrate by a metalorganic chemical vapor deposition method, and forming a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AlGaAs/N-GaAs by introducing a gas comprising CCl.sub.4 or CBr.sub.4 .
Claims8
A fabrication method for a horizontal direction PN junction array, comprising:
- forming a recess on an N type GaAs substrate by non-planar growth;
- growing a P type epitaxial layer on the N type GaAs substrate by metalorganic chemical vapor deposition to form a horizontal direction PN junction array of P-GaAs/N-GaAs or P-AIGaAs/N-GaAs by introducing a gas of CCl.sub.4 or CBr.sub.4.
Dependencies are inferred from the claim text.