Y10S 148/114
Nitrides of silicon
Y10S148/114 (Nitrides of silicon) appears on 64 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 64
- Published applications
- 0
- Assignees
- 38
- Inventors
- 109
- Latest grant
- 24 Oct 2000
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 3 | 0 |
| 1978 | 7 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 6 | 0 |
| 1994 | 4 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device employing silicon nitride layers with varied hydrogen concentration24 Oct 2000US 6,137,156 ADenso Corporation
- Non-uniformly nitrided gate oxide and method15 Sep 1998US 5,808,348 AHarris Corporation
- Method of making a variable concentration SiON gate insulating film30 Jun 1998US 5,773,325 ASemiconductor Energy Laboratory Co.Ltd.
- Method of forming silicon nitride with varied hydrogen concentration3 Feb 1998US 5,714,408 ADenso Corporation
- Method of making non-uniformly nitrided gate oxide22 Jul 1997US 5,650,344 AHarris Corporation
No published applications in this class yet.
Most cited
By later US patents
- Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride261US 4,894,352 ATexas Instruments Incorporated · 1990
- Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device105US 5,242,848 ASilicon Storage Technology, Inc. · 1993
- Process for producing a semiconductor device having a silicon oxynitride insulative film93US 4,980,307 AFujitsu Limited · 1990
- Semiconductor device having insulating film90US 4,621,277 AFujitsu Limited · 1986
- Method of making gate overlapped lightly doped drain for buried channel devices90US 5,358,879 ALoral Federal Systems Company · 1994