Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
AssigneeTexas Instruments Incorporated
InventorsAndrew P. Lane, Douglas A. Webb, Gene R. Frederick
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Abstract
In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.
Claims40
A composition for depositing a layer of silicon-containing compound on a substrate within a low-pressure reactor, comprising:
- between about four and about seventy percent by volume of an organosilicon gas compound;
- and
- between about two percent and about seventy percent by volume of nitrogen trifluoride.
A process for depositing a layer of a silicon-containing compound on a wafer, comprising the steps of:
- disposing the wafer in a chamber evacuated to a low pressure;
- introducing a gaseous organosilicon compound into the chamber;
- introducing nitrogen trifluoride into the chamber;
- responsive to said steps of introducing the organic compound and nitrogen trifluoride into the chamber, reacting the gaseous organosilicon compound and the nitrogen trifluoride;
- and
- responsive to said step of reacting, depositing the silicon-containing compound on the wafer at a rate greater than a corresponding deposition rate obtained without using nitrogen trifluoride.
A process for depositing a silicon-containing compound on a wafer, comprising the steps of:
- disposing the wafer in a chamber evacuated to a low pressure;
- introducing a gaseous organosilicon compound into the chamber;
- introducing nitrogen trifluoride into the chamber;
- responsive to said steps of introducing the organosilicon compound and the nitrogen trifluoride into the chamber, reacting the organosilicon compound and the nitrogen trifluoride to deposit the silicon containing compound on the wafer, such that the mobile ion concentration and the surface-state charge density of the layer will be lower than corresponding layers formed without the use of nitrogen trifluoride.
A process for depositing a layer of silicon-containing compound on a wafer surface having topographical features of high aspect ratio, comprising the steps of:
- disposing the wafer in a chamber evacuated to a pressure below about one torr;
- introducing a gaseous organosilicon compound into the chamber;
- introducing nitrogen trifluoride into the chamber;
- and
- reacting the organo silicon compound with the nitrogen trifluoride to deposit the layer of silicon-containing compound on the surface such that voids in the layer are not formed.
Dependencies are inferred from the claim text.