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AssigneeDenso Corporation
InventorsYuji Ichikawa, Yasushi Tanaka, Yasuo Souki, Ryouichi Kubokoya, Akira Kuroyanagi, Hirohito Shioya
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On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.
A method for manufacturing a semiconductor device, in which a transistor having a gate insulation film is formed in a semiconductor substrate of which surface is covered with a plasma SiN film formed by a plasma CVD method directed to forming a SiN film on said semiconductor substrate while supplying ammonium gas and silane family gas, the method comprising the steps of:
Dependencies are inferred from the claim text.