Y10S 148/065
Gp iii-v generic compounds-processing
Official title: Gp III-V generic compounds-processing
Y10S148/065 (Gp iii-v generic compounds-processing) appears on 129 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 129
- Published applications
- 0
- Assignees
- 69
- Inventors
- 250
- Latest grant
- 12 Jan 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 23 | 0 |
| 1977 | 7 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 4 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 7 | 0 |
| 1989 | 19 | 0 |
| 1990 | 11 | 0 |
| 1991 | 8 | 0 |
| 1992 | 6 | 0 |
| 1993 | 9 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Formation of InGaSa p-n Junction by control of growth temperature12 Jan 1999US 5,858,818 AElectronics and Telecommunications Research Institute
- Method for producing group III nitride compound semiconductor substrates using ZnO release layers8 Dec 1998US 5,846,844 AHiroshi Amano
- Process for producing a luminous element of group III nitride semi-conductor10 Nov 1998US 5,834,326 APioneer Electronic Corporation
- Method for making III-Nitride laser and detection device10 Nov 1998US 5,834,331 ANorthwestern University
- Capped anneal28 Apr 1998US 5,744,375 ATexas Instruments Incorporated
No published applications in this class yet.
Most cited
By later US patents
- Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer169US 5,389,571 APioneer Electronic Corporation · 1995
- Method for making III-Nitride laser and detection device148US 5,834,331 ANorthwestern University · 1998
- Gallium nitride base semiconductor device108US 5,239,188 APioneer Electronic Corporation · 1993
- AlGaAs native oxide96US 5,262,360 AThe Board of Trustees of the University of Illinois · 1993
- Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system92US 4,147,571 AHewlett-Packard Company · 1979