Method for making III-Nitride laser and detection device
AssigneeNorthwestern University
InventorManijeh Razeghi
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Abstract
A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.
Claims16
A method of growing a III-V nitride compound semiconductor, comprising the steps of:
- a) providing a substrate;
- b) growing a buffer layer on said substrate;
- c) growing, doping and annealing a p-type lower contact layer on said buffer layer;
- d) growing, doping and annealing a p-type lower confinement layer over said lower contact layer;
- e) growing an active layer over said lower confinement layer;
- f) growing and doping an n-type upper confinement layer over said active layer;
- g) growing an upper n-type contact layer over said upper confinement layer;
- h) doping said upper contact layer and thereby forming an unfinished structure;
- i) masking and etching said unfinished structure to expose said lower contact layer;
- j) ion implanting said exposed lower contact area with ions selected from the Group consisting of Ag, Hg, Cu, Si and Ge;
- and
- k) making an ohmic contact on each of said n-type and p-type contact layers to form said III-V nitride compound semiconductor.
A method of preparing a III-Nitride based laser diode structure comprising the steps of:
- a) providing a p-i-n structure by growing and doping a lower p-type contact layer by growing a p-type layer on a substrate;
- b) annealing said p-type layer;
- c) growing, doping a p-type confinement layer over said p-type layer;
- d) annealing said p-type confinement layer;
- e) growing an active layer on said confinement layer;
- f) growing and doping a n-type confinement layer over said active layer;
- g) growing and doping an upper n-type contact layer over said n-type confinement layer;
- h) masking and etching said p-i-n structure to expose said lower contact layer;
- i) ion implanting said exposed contact layer with Ag, Hg or Cu;
- and
- j) forming an ohmic contact on said ion implanted lower contact layer and on said upper contact layer thereby forming said III-Nitride based laser diode structure.
Dependencies are inferred from the claim text.