Method for producing group III nitride compound semiconductor substrates using ZnO release layers
AssigneesToyoda Gosei Co., Ltd., Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu
InventorsIsamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, Theeradetch Detchprohm
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Abstract
A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.
Claims4
A method for producing a semiconductor comprising the steps of:
- forming an intermediate zinc oxide (ZnO) layer on a sapphire substrate, said immediate ZnO layer having a thickness of about 10 nm to 1 .mu.m;
- forming a semiconductor substrate on said intermediate ZnO layer, said semiconductor substrate being made of a nitrogen-group III compound satisfying the formula Al.sub.x Ga.sub.y In.sub.l-x-y N, inclusive of x=0, y=0 and x=y=0;
- etching said intermediate ZnO layer with etching liquid capable of selectively etching ZnO so that the ZnO layer is substantially removed from between the semiconductor substrate and the sapphire substrate;
- separating said semiconductor substrate from said sapphire substrate by said etching;
- and
- epitaxially growing a semiconductor layer made of nitrogen-group III compound satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on said semiconductor substrate.
Dependencies are inferred from the claim text.