Y10S 148/123
Polycrystalline diffuse anneal
Y10S148/123 (Polycrystalline diffuse anneal) appears on 53 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 53
- Published applications
- 0
- Assignees
- 24
- Inventors
- 101
- Latest grant
- 9 Nov 1999
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 6 | 0 |
| 1990 | 3 | 0 |
| 1991 | 6 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Forming CMOS transistor using diffusion source and wet/dry oxidation9 Nov 1999US 5,981,321 ANational Science Council
- Semiconductor processing method of forming complementary n-type doped and p-type doped active regions within a semiconductor substrate19 Oct 1999US 5,970,335 AMicron Technology, Inc.
- Method of forming improved contacts from polysilicon to siliconor other polysilicon layers1 Sep 1998US 5,801,087 AMicron Technology, Inc.
- Semiconductor device having improved surface evenness14 Apr 1998US 5,739,590 ACanon Kabushiki Kaisha
- Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate29 Apr 1997US 5,624,863 AMicron Technology, Inc.
No published applications in this class yet.
Most cited
By later US patents
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Semiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrate131US 5,624,863 AMicron Technology, Inc. · 1997
- Method for manufacturing a semiconductor device113US 4,309,224 ATokyo Shibaura Denki Kabushiki Kaisha · 1982
- Process for producing dielectrically isolated silicon devices75US 4,497,683 AAT&T Bell Laboratories · 1985
- Method of producing a semiconductor device by simultaneous multiple laser annealing65US 4,375,993 AFujitsu Limited · 1983