Method of forming improved contacts from polysilicon to siliconor other polysilicon layers

A method of forming conductively doped contacts on a supporting substrate in a semiconductor device, said method comprising the steps of:

• preparing a conductive area to accept contact formation;
• forming a phosphorus doped polysilicon layer over said conductive area, said conductive area and said phosphorus layer having a first interfacial silicon dioxide layer therebetween;
• forming an arsenic doped polysilicon layer over said phosphorus doped polysilicon layer, said arsenic doped polysilicon layer and said phosphorus doped polysilicon layer having a second interfacial silicon dioxide layer therebetween;
• annealing said layers to provide sufficient thermal treatment to allow phosphorus atoms to break up said first interfacial silicon dioxide layer while said second interfacial silicon dioxide layer deters the out-diffusion of phosphorus atoms into said arsenic doped polysilicon layer;
• and
• further annealing said layers so that said phosphorus atoms break up said second interfacial silicon dioxide layer.