Back to results
US 4,375,993 AGranted
Method of producing a semiconductor device by simultaneous multiple laser annealing
AssigneeFujitsu Limited
InventorsHaruhisa Mori, Hajime Kamioka, Motoo Nakano, Nobuo Sasaki
Life of this patent
Estimating the term…
Abstract
A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a second laser being applied to the insulator layer to heat it while the first layer is applied to the semiconductor laser.
Claims22
A method of producing a semiconductor device which comprises the steps of:
- (a) forming an insulator layer on a semiconductor substrate;
- (b) forming a semiconductor layer on the insulator layer;
- and,
- (c) then annealing the semiconductor layer by means of a first laser with a second laser being applied to said insulator layer to heat said insulator layer while the first laser is applied to the semiconductor layer.
1 more element
A method of producing a semiconductor device comprising the steps of:
- (a) forming a silicon dioxide layer having a thickness of approximately 1 .mu.m on a silicon substrate having a thickness of approximately 500 .mu.m, by thermally oxidizing said silicon substrate;
- (b) forming windows extending through said silicon dioxide layer to said silicon substrate;
- (c) forming on said silicon dioxide layer and in said windows by chemical vapor deposition, a polycrystalline layer having a thickness of approximately 1 .mu.m;
- (d) applying an argon laser beam having approximately a power of 10 watts, a beam width of 100 .mu.m, and a scanning speed of 10 centimeters/second to said polycrystalline layer;
- (e) simultaneously applying a carbon dioxide laser beam having a power of approximately 50 watts to said silicon dioxide layer.
2 more elements
A method of producing a semiconductor device comprising the steps of:
- (a) forming a silicon dioxide layer having a thickness of approximately 0.8 .mu.m on a silicon substrate having a thickness of approximately 600 .mu.m, by thermally oxidizing said silicon substrate;
- (b) forming on said silicon dioxide layer by chemical vapor deposition, a polycrystalline layer having a thickness of approximately 0.9 .mu.m;
- (c) implanting As.sup.+ into specified regions of said polycrystalline layer;
- (d) applying a YAG pulse laser having a pulse of approximately 20 ns and an energy density of 4 joules/cm.sup.2 to said polycrystalline layer;
- and
- (e) simultaneously applying a carbon dioxide pulse laser beam having an energy density of approximately 2 joules/cm.sup.2 to said silicon dioxide layer, whereby said polycrystalline layer has an electric resistance of approximately 10.sup.2 .OMEGA. cm.
3 more elements
Dependencies are inferred from the claim text.