Y10S 148/023
Deep level dopants
Y10S148/023 (Deep level dopants) appears on 37 US grants and 12 published applications in this corpus.
Search patents in Y10S- Granted patents
- 37
- Published applications
- 12
- Assignees
- 23
- Inventors
- 47
- Latest grant
- 21 Sep 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 3 |
| 2002 | 1 | 2 |
| 2003 | 5 | 1 |
| 2004 | 0 | 3 |
| 2005 | 3 | 2 |
| 2006 | 2 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for fabricating semiconductor integrated circuit device21 Sep 2010US 7,799,690 B2Renesas Electronics Corporation
- Method for fabricating semiconductor integrated circuit device31 Jul 2007US 7,250,376 B2Renesas Technology Corp.
- Method for fabricating semiconductor integrated circuit device30 May 2006US 7,053,007 B2Renesas Technology Corp.
- Method for fabricating semiconductor integrated circuit device7 Mar 2006US 7,008,880 B2Renesas Technology Corp.
- Method for fabricating semiconductor integrated circuit device8 Nov 2005US 6,962,880 B2Renesas Technology Corp.
- Method for fabricating semiconductor intergrated circuit device21 Feb 2008US 2008/0045027 A1Renesas Electronics Corporation
- Method for fabricating semiconductor integrated circuit device13 Oct 2005US 2005/0227501 A1Renesas Technology Corp.
- Method for fabricating semiconductor integrated circuit device22 Sep 2005US 2005/0208731 A1Renesas Technology Corp.
- Method for fabricating semiconductor integrated circuit device19 Aug 2004US 2004/0161945 A1Renesas Technology Corp.
- Method for fabricating semiconductor intergrated circuit device12 Aug 2004US 2004/0157467 A1Renesas Technology Corp.
Most cited
By later US patents
- Surface denuding of silicon wafer71US 4,548,654 AMotorola, Inc. · 1985
- Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step40US 4,220,483 AInternational Business Machines Corporation · 1980
- CMOS latchup suppression by localized minority carrier lifetime reduction38US 5,441,900 ANational Semiconductor Corporation · 1995
- Semiconductor bipolar integrated circuit device and method for fabrication thereof35US 4,642,883 AFujitsu Limited · 1987
- Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers23US 4,999,315 AAT&T Bell Laboratories · 1991