Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
AssigneeAT&T Bell Laboratories
InventorsWilbur D. Johnston, Jr., Robert F. Karlicek, Jr., Judith A. Long, Daniel P. Wilt
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Abstract
High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
Claims12
A method of fabricating a device, which includes an iron-doped, indium-based, compound Group III-V semiconductor region, comprising the steps of (1) forming a precursor gas comprising a carrier gas, a volatile dopant compound, a volatile indium compound and a Group V hydride, (2) directing said precursor gas through a heated chamber to contact a heated deposition body, and (3) inducing deposition of said compound semiconductor on said body,
- said carrier gas comprises an inert gas, said dopant compound includes iron, the concentration of hydrogen in said precursor gas is limited to prevent excessive precipitation of iron, and the concentrations of said volatile indium compound at said body and of said Group V hydride are maintained sufficient to result in said deposition.
Dependencies are inferred from the claim text.