Method of increasing the gettering effect in the bulk of semiconductor bodies utilizing a preliminary thermal annealing step
AssigneeInternational Business Machines Corporation
InventorVictor G. Cazcarra
Life of this patent
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Abstract
The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750.degree.-900.degree. C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.
Claims6
A method of increasing the internal gettering effect in the bulk of silicon semiconductor bodies by generating small clusters which operate as nucleation centers, or precipitation centers, of the oxygen atoms present in the bulk of said bodies, comprising, prior to high temperature thermal cycling, thermally annealing said bodies at temperatures within 750.degree.-900.degree. C. for a length of time of between 1 and 8 hours.
Dependencies are inferred from the claim text.