Y10S 257/00
Active solid-state devices
Official title: Active solid-state devices, e.g. transistors, solid-state diodes
Y10S257/00 (Active solid-state devices) appears on 4,671 US grants and 1,835 published applications in this corpus.
Search patents in Y10S- Granted patents
- 4,671
- Published applications
- 1,835
- Assignees
- 721
- Inventors
- 5,334
- Latest grant
- 10 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 34 | 0 |
| 1977 | 24 | 0 |
| 1978 | 31 | 0 |
| 1979 | 25 | 0 |
| 1980 | 24 | 0 |
| 1981 | 31 | 0 |
| 1982 | 15 | 0 |
| 1983 | 19 | 0 |
| 1984 | 17 | 0 |
| 1985 | 34 | 0 |
| 1986 | 47 | 0 |
| 1987 | 54 | 0 |
| 1988 | 55 | 0 |
| 1989 | 124 | 0 |
| 1990 | 109 | 0 |
| 1991 | 116 | 0 |
| 1992 | 107 | 0 |
| 1993 | 95 | 0 |
| 1994 | 156 | 0 |
| 1995 | 170 | 0 |
| 1996 | 199 | 0 |
| 1997 | 199 | 0 |
| 1998 | 240 | 0 |
| 1999 | 257 | 0 |
| 2000 | 230 | 0 |
| 2001 | 226 | 81 |
| 2002 | 227 | 250 |
| 2003 | 197 | 185 |
| 2004 | 261 | 224 |
| 2005 | 198 | 238 |
| 2006 | 190 | 165 |
| 2007 | 173 | 155 |
| 2008 | 144 | 142 |
| 2009 | 124 | 93 |
| 2010 | 146 | 75 |
| 2011 | 111 | 65 |
| 2012 | 85 | 42 |
| 2013 | 36 | 25 |
| 2014 | 43 | 33 |
| 2015 | 30 | 16 |
| 2016 | 24 | 15 |
| 2017 | 17 | 13 |
| 2018 | 7 | 5 |
| 2019 | 6 | 5 |
| 2020 | 6 | 5 |
| 2021 | 4 | 1 |
| 2022 | 1 | 1 |
| 2023 | 3 | 1 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
- Y10S 257/903Fet configuration adapted for use as static memory cell1,266
- Y10S 257/90Mosfet type gate sidewall insulating spacer785
- Y10S 257/915Active solid-state devices: with titanium nitride portion or region288
- Y10S 257/906Dram with capacitor electrodes used for accessing282
- Y10S 257/905Plural dram cells share common contact or common trench247
- Y10S 257/908Dram configuration with transistors and capacitors of pairs of cells along a218
- Y10S 257/924Active solid-state devices: with passive device198
- Y10S 257/93Thermoelectric174
All 30 subgroupsShow fewer
- Y10S 257/907Folded bit line dram configuration141
- Y10S 257/914Polysilicon containing oxygen, nitrogen, or carbon134
- Y10S 257/918Light emitting regenerative switching device133
- Y10S 257/91Diode arrays124
- Y10S 257/913Active solid-state devices: with means to absorb or localize unwanted impurities or115
- Y10S 257/909Macrocell arrays114
- Y10S 257/923Active solid-state devices: with means to optimize electrical conductor current carrying capacity114
- Y10S 257/922Active solid-state devices: with means to prevent inspection of or tampering with112
- Y10S 257/901Mosfet substrate bias107
- Y10S 257/926Elongated lead extending axially through another elongated lead96
- Y10S 257/92Conductor layers on different levels connected in parallel68
- Y10S 257/928Active solid-state devices: with shorted pn or schottky junction other than emitter62
- Y10S 257/917Plural dopants of same conductivity type in same region60
- Y10S 257/921Radiation hardened semiconductor device51
- Y10S 257/916Narrow band gap semiconductor material, <<1ev50
- Y10S 257/902Fet with metal source region45
- Y10S 257/911Light sensitive array adapted to be scanned by electron beam45
- Y10S 257/929Pn junction isolated integrated circuit with isolation walls having minimum dopant concentration36
- Y10S 257/927Different doping levels in different parts of pn junction to produce shaped33
- Y10S 257/919Elements of similar construction connected in series or parallel to average out31
- Y10S 257/925Bridge rectifier module31
- Y10S 257/912Charge transfer device using both electron and hole signal carriers28
Recent patents
- Floating body memory cell having gates favoring different conductivity type regions10 Oct 2023US 11,785,759 B2Intel Corporation
- Semiconductor device and production method thereof29 Aug 2023US RE49,631 E1Sony Corporation
- Scalable polylithic on-package integratable apparatus and method28 Feb 2023US RE49,439 E1Intel Corporation
- Floating body memory cell having gates favoring different conductivity type regions4 Oct 2022US 11,462,540 B2Intel Corporation
- Hybrid computing module14 Dec 2021US 11,199,892 B2
- A scalable polylithic on-package integratable apparatus and method13 Apr 2023US 2023/0110247 A1Intel Corporation
- Floating body memory cell having gates favoring different conductivity type regions29 Dec 2022US 2022/0415894 A1Intel Corporation
- Floating body memory cell having gates favoring different conductivity type regions27 May 2021US 2021/0159228 A1Intel Corporation
- Hybrid computing module10 Dec 2020US 2020/0387206 A1
- Floating body memory cell having gates favoring different conductivity type regions1 Oct 2020US 2020/0312854 A1Intel Corporation
Most cited
By later US patents
- Silicone polymer insulation film on semiconductor substrate and method for forming the film632US 6,352,945 B1ASM Japan K .K. · 2002
- Silicone polymer insulation film on semiconductor substrate and method for forming the film589US 6,455,445 B2ASM Japan K .K. · 2002
- Semiconductor device and method for manufacturing the same536US 6,503,826 B1NEC Corporation · 2003
- Programmable semiconductor structures and methods for using the same522US 4,646,266 AEnergy Conversion Devices, Inc. · 1987
- Wiring structure of semiconductor device and method for manufacturing the same486US 5,998,870 ASamsung Electronics Co., Ltd. · 1999