Y10S 257/901
Mosfet substrate bias
Official title: MOSFET substrate bias
Y10S257/901 (Mosfet substrate bias) appears on 107 US grants and 25 published applications in this corpus.
Search patents in Y10S- Granted patents
- 107
- Published applications
- 25
- Assignees
- 52
- Inventors
- 191
- Latest grant
- 8 Oct 2013
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 5 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 5 | 0 |
| 1996 | 6 | 0 |
| 1997 | 3 | 0 |
| 1998 | 9 | 0 |
| 1999 | 6 | 0 |
| 2000 | 8 | 0 |
| 2001 | 4 | 0 |
| 2002 | 6 | 5 |
| 2003 | 1 | 1 |
| 2004 | 4 | 3 |
| 2005 | 5 | 2 |
| 2006 | 2 | 3 |
| 2007 | 1 | 0 |
| 2008 | 2 | 1 |
| 2009 | 2 | 4 |
| 2010 | 2 | 1 |
| 2011 | 2 | 3 |
| 2012 | 8 | 2 |
| 2013 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device and method of manufacturing the same8 Oct 2013US 8,551,849 B2Fujitsu Semiconductor Limited
- Semiconductor device25 Sep 2012US 8,274,095 B2Mitsubishi Electric Corporation
- Bipolar semiconductor device and manufacturing method17 Jul 2012US 8,222,681 B2Infineon Technologies Austria AG
- Semiconductor device including semiconductor zones and manufacturing method22 May 2012US 8,183,666 B2Infineon Technologies AG
- ICs with end gates having adjacent electrically connected field poly20 Mar 2012US 8,138,074 B1Texas Instruments Incorporated
- Semiconductor device and method of manufacturing the same31 May 2012US 2012/0135574 A1Fujitsu Semiconductor Limited
- Bipolar semiconductor device and manufacturing method26 Apr 2012US 2012/0098030 A1Infineon Technologies Austria AG
- Semiconductor device22 Sep 2011US 2011/0227128 A1Mitsubishi Electric Corporation
- Bipolar semiconductor device and manufacturing method5 May 2011US 2011/0101416 A1Infineon Technologies Austria AG
- Semiconductor device including semiconductor zones and manufacturing method5 May 2011US 2011/0101501 A1Infineon Technologies AG
Most cited
By later US patents
- Commonly housed diverse semiconductor die257US 5,814,884 AInternational Rectifier Corporation · 1998
- Lateral double-diffused MOS transistor device172US 4,300,150 ANorth American Philips Corporation · 1981
- Method for forming advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits135US 5,877,049 AAdvanced Micro Devices, Inc. · 1999
- Advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits129US 5,608,253 AAdvanced Micro Devices, Inc. · 1997
- MOS high frequency switch circuit using a variable well bias128US 5,818,099 AInternational Business Machines Corporation · 1998