Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorNaoyoshi TAMURA
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Abstract
Aimed at providing a highly reliable semiconductor device appropriately increased in stress at the channel region so as to improve carrier injection rate, thereby dramatically improved in transistor characteristics, and made adaptable also to recent narrower channel width, and a method of manufacturing the same, and a method of manufacturing the same, a first sidewall composed of a stress film having expandability is formed on the side faces of a gate electrode, a second sidewall composed of a film having smaller stress is formed on the first sidewall, and a semiconductor, which is a SiC layer for example, is formed as being positioned apart from the first sidewall while placing the second sidewall in between.
Claims9
A method of manufacturing a semiconductor device, comprising:
- forming a gate electrode over a semiconductor substrate while placing a gate insulating film in between;
- forming a first sidewall including a stress film over the side faces of said gate electrode;
- forming a second sidewall over said first sidewall;
- forming a recess by etching said semiconductor substrate using said gate electrode, said first sidewall and said second sidewall as a mask;
- and
- forming a semiconductor layer in said recess.
A method of manufacturing a semiconductor device, comprising:
- forming a gate electrode over a semiconductor substrate while placing a gate insulating film in between;
- forming a first sidewall over the side faces of said gate electrode;
- forming a recess by etching said semiconductor substrate using said gate electrode and said first sidewall as a mask;
- forming a semiconductor layer in said recess;
- removing said first sidewall;
- forming a second sidewall including stress film over the side faces of said gate electrode;
- and
- forming a third sidewall on said second sidewall,
- wherein said semiconductor layer is positioned apart from the said second sidewall while placing said third sidewall in between.
Dependencies are inferred from the claim text.