Semiconductor device including semiconductor zones and manufacturing method

A semiconductor device, comprising:

• first semiconductor zones of a first conductivity type including a first dopant species of the first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type;
• second semiconductor zones of the second conductivity type including the second dopant species, the first and second semiconductor zones being alternately arranged in contact with each other along a lateral direction extending in parallel to a surface of a semiconductor body;
• wherein
• one of the first and second semiconductor zones constitute drift zones and a diffusion coefficient of the second dopant species is at least twice as large as the diffusion coefficient of the first dopant species;
• a concentration profile of the first dopant species along a vertical direction perpendicular to the surface of the semiconductor body includes at least two maxima;
• and
• wherein materials of the first and second dopant species include P and In, Ga and P, B and Sb, In and Sb, Ga and Sb, B and As, In and As, or Ga and As.

A semiconductor device, comprising:

• first semiconductor zones of a first conductivity type including a first dopant species of the first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type;
• second semiconductor zones of the second conductivity type including the second dopant species, the first and second semiconductor zones being alternately arranged in contact with each other along a lateral direction extending in parallel to a surface of a semiconductor body;
• wherein
• one of the first and second semiconductor zones constitute drift zones and a diffusion coefficient of the second dopant species is at least twice as large as the diffusion coefficient of the first dopant species;
• a concentration profile of the first dopant species along a vertical direction perpendicular to the surface of the semiconductor body includes at least two maxima;
• and
• one of the first and second semiconductor zones include at least one epitaxial semiconductor layer on a semiconductor substrate.