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US 2012/0098030 A1Published application
Bipolar semiconductor device and manufacturing method
AssigneeInfineon Technologies Austria AG
InventorsHans-Joachim Schulze, Francisco Javier Santos Rodriguez
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Abstract
A trench IGBT is disclosed. One embodiment includes an embedded structure arranged above a collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor region including additional scattering centers for holes, the embedded structure being arranged below the body contact region such that the embedded structure and the body contact region overlap in a horizontal projection.
Claims4
A trench IGBT, comprising in a vertical cross-section:
- an emitter electrode;
- a p-type body region;
- an n-type drift region forming a pn-junction with the body region;
- an insulated gate electrode arranged in a vertical trench extending through the p-type body region into the drift region;
- a p-type body contact region electrically connecting the body region with the emitter electrode,
- a p-type collector region arranged below the drift region;
- and
- an embedded structure arranged above the collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor region comprising additional scattering centers for holes,
- the embedded structure being arranged below the body contact region such that the embedded structure and the body contact region overlap in a horizontal projection.
6 more elements
Dependencies are inferred from the claim text.