Y10S 257/905
Plural dram cells share common contact or common trench
Y10S257/905 (Plural dram cells share common contact or common trench) appears on 247 US grants and 140 published applications in this corpus.
Search patents in Y10S- Granted patents
- 247
- Published applications
- 140
- Assignees
- 77
- Inventors
- 293
- Latest grant
- 26 Apr 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 7 | 0 |
| 1999 | 7 | 0 |
| 2000 | 9 | 0 |
| 2001 | 13 | 6 |
| 2002 | 15 | 15 |
| 2003 | 18 | 17 |
| 2004 | 20 | 23 |
| 2005 | 23 | 23 |
| 2006 | 18 | 16 |
| 2007 | 16 | 11 |
| 2008 | 14 | 12 |
| 2009 | 8 | 6 |
| 2010 | 15 | 3 |
| 2011 | 6 | 4 |
| 2012 | 6 | 4 |
| 2013 | 2 | 0 |
| 2014 | 2 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Trench-gated MIS devices26 Apr 2016US 9,324,858 B2Vishay-Siliconix
- Multi-resistive integrated circuit memory4 Nov 2014US 8,878,274 B2Micron Technology, Inc.
- Power device with self-aligned source regions6 May 2014US 8,716,783 B2Fairchild Semiconductor Corporation
- Multiple layer barrier metal for device component formed in contact trench12 Nov 2013US 8,580,676 B2Alpha and Omega Semiconductor Incorporated
- Structure for high density stable static random access memory26 Mar 2013US 8,405,129 B2International Business Machines Corporation
- Design Structure for High Density Stable Static Random Access Memory16 Aug 2012US 2012/0205721 A1International Business Machines Corporation
- Multiple layer barrier metal for device component formed in contact trench24 May 2012US 2012/0129328 A1Alpha and Omega Semiconductor Incorporated
- Power device with self-aligned source regions17 May 2012US 2012/0119291 A1Fairchild Semiconductor Corporation
- Multi-resistive integrated circuit memory26 Apr 2012US 2012/0099366 A1Micron Technology, Inc.
- Methods of fabricating flash memory devices having shared sub active regions29 Dec 2011US 2011/0318902 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor device353US 6,969,662 B22005
- Semiconductor device257US 7,541,616 B2Innovative Silicon ISi SA · 2009
- Semiconductor device238US 6,925,006 B2Innovative Silicon S.A. · 2005
- Single digit line with cell contact interconnect128US 6,066,870 AMicron Technology, Inc. · 2000
- High-density NROM-FINFET90US 7,208,794 B2Infineon Technologies AG · 2007