Y10S 257/913
Active solid-state devices: with means to absorb or localize unwanted impurities or
Official title: with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
Y10S257/913 (Active solid-state devices: with means to absorb or localize unwanted impurities or) appears on 115 US grants and 38 published applications in this corpus.
Search patents in Y10S- Granted patents
- 115
- Published applications
- 38
- Assignees
- 49
- Inventors
- 156
- Latest grant
- 24 Jul 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 4 | 0 |
| 1996 | 7 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 9 | 0 |
| 2000 | 11 | 0 |
| 2001 | 15 | 5 |
| 2002 | 8 | 7 |
| 2003 | 7 | 3 |
| 2004 | 2 | 4 |
| 2005 | 7 | 10 |
| 2006 | 5 | 1 |
| 2007 | 1 | 4 |
| 2008 | 4 | 2 |
| 2009 | 3 | 2 |
| 2010 | 3 | 0 |
| 2011 | 1 | 0 |
| 2012 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Removal of impurities from semiconductor device layers24 Jul 2012US 8,227,299 B2Imec
- Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film5 Jul 2011US 7,972,942 B1Atomic Energy Council-Institute of Nuclear Energy Research
- Method of manufacturing semiconductor device and semiconductor device26 Oct 2010US 7,821,005 B2Semiconductor Energy Laboratory Co.Ltd.
- Wafer-level packaging of micro devices27 Jul 2010US 7,763,962 B2Spatial Photonics, Inc.
- Semiconductor device and method for fabricating same13 Jul 2010US 7,755,085 B2Sharp Kabushiki Kaisha
- Removal of impurities from semiconductor device layers5 Nov 2009US 2009/0273010 A1Interuniversitair Microelektronica Centrum vzw (IMEC)
- Semiconductor device and method for fabricating same23 Apr 2009US 2009/0102024 A1Sharp Kabushiki Kaisha
- Wafer-level packaging of micro devices15 May 2008US 2008/0111203 A1Spatial Photonics, Inc.
- Silicon on insulator structure with a single crystal cz silicon device layer having a region which is free of agglomerated intrinsic point defects24 Jan 2008US 2008/0020168 A1MEMC Electronic Materials, Inc.
- Non-uniform minority carrier lifetime distributions in high performance silicon power devices11 Oct 2007US 2007/0238266 A1MEMC Electronic Materials, Inc.
Most cited
By later US patents
- Semiconductor device having buried boron and carbon regions100US 6,198,157 B1Hitachi, Ltd. · 2001
- Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes76US 5,378,926 AHughes Aircraft Company · 1995
- Semiconductor substrate having a gettering layer76US 5,539,245 AMitsubishi Denki Kabushiki Kaisha · 1996
- Semiconductor substrate having a gettering layer68US 5,327,007 AMitsubishi Denki Kabushiki Kaisha · 1994
- Single crystal titanium nitride epitaxial on silicon61US 5,406,123 AEngineering Research Ctr., North Carolina State Univ. · 1995