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US 2008/0020168 A1Published application
Silicon on insulator structure with a single crystal cz silicon device layer having a region which is free of agglomerated intrinsic point defects
AssigneeMEMC Electronic Materials, Inc.
InventorRobert Falster
Life of this patent
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Abstract
The present invention relates to a silicon on insulator (“SOI”) structure in which the device layer is derived from a single crystal Cz silicon wafer which has an axially symmetric region which is substantially free of agglomerated intrinsic point defects. The device layer of the silicon on insulator structure is single crystal Cz silicon having an axially symmetric region which is substantially free of agglomerated intrinsic point defects.
Claims18
A silicon on insulator structure, the structure comprising:
- a single crystal Czochralski silicon device layer having a central axis, a circumferential edge, a radius extending from the central axis to the circumferential edge, and a first axially symmetric region having no detectible agglomerated intrinsic point defects at a detection limit of 103 defects/cm3, wherein the device layer has a nominal diameter of at least about 150 mm;
- a single crystal Czochralski silicon handle wafer;
- and, an insulating layer between the device layer and the handle wafer.
Dependencies are inferred from the claim text.