Removal of impurities from semiconductor device layers

A method of forming a semiconductor device, the method comprising:

• providing at least one semiconductor device layer comprising a compound semiconductor material and/or germanium;
• and
• removing impurities from the at least one semiconductor device layer, wherein the process of removing impurities comprises:
• providing a germanium gettering layer with a higher solubility for the impurities than the semiconductor device layer, the germanium gettering layer being provided at least partly in direct or indirect contact with the at least one semiconductor device layer, such that impurities diffuse from the at least one semiconductor device layer to the germanium gettering layer,
• wherein each heating process performed during the manufacturing of the semiconductor device after provision of the at least one semiconductor layer has a low thermal budget determined by temperatures equal to or lower than about 900° C. and time periods equal to or lower than about 5 minutes.