Method of manufacturing semiconductor device and semiconductor device

A semiconductor device comprising:

• a crystalline semiconductor film including a metal element over a substrate;
• a gate insulating film adjacent to the crystalline semiconductor film;
• and
• a gate electrode adjacent to the gate insulating film,
• wherein the crystalline semiconductor film comprises a channel forming region, a pair of first impurity regions including a one conductivity type impurity element adjacent to the channel forming region, and a pair of second impurity regions including the one conductivity type impurity element and a noble gas element,
• wherein the second impurity regions comprise the metal element at a higher concentration than the channel forming region and the first impurity regions,
• wherein the pair of second impurity regions are sandwiching the channel forming region, and the pair of first impurity regions in the crystalline semiconductor film and each located on end portions of the crystalline semiconductor film,
• wherein, in the crystalline semiconductor film, the noble gas element is only included in the second impurity regions, and
• wherein an outer side surface of each of the second impurity regions is in contact with the gate insulating film.

A semiconductor device comprising:

• a crystalline semiconductor film including a metal element over a substrate;
• a gate insulating film adjacent to the crystalline semiconductor film;
• and
• a gate electrode adjacent to the gate insulating film,
• wherein the crystalline semiconductor film comprises a channel forming region and source and drain regions, each of the source and drain regions including a one conductivity type impurity element and being adjacent to the channel forming region,
• wherein the source and drain regions include the metal element at a higher concentration than the channel forming region,
• wherein, in the crystalline semiconductor film, a noble gas element is included in only the source and drain regions, and
• wherein the whole of the source and drain regions include the noble gas element.

A semiconductor device comprising:

• a blocking layer over a substrate
• a crystalline semiconductor film on the blocking layer;
• a gate insulating film adjacent to the crystalline semiconductor film;
• a gate electrode adjacent to the gate insulating film;
• a passivation film over, the crystalline semiconductor film, the gate insulating film, and the gate electrode,
• wherein the crystalline semiconductor film comprises a channel forming region and source and drain regions adjacent to the channel forming region,
• wherein the source and drain regions include a metal element at a higher concentration than the channel forming region,
• wherein, in the crystalline semiconductor film, a noble gas element is included in only the source and drain regions, and
• wherein the whole of the source and drain regions include the noble gas element.