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US 5,539,245 AGranted
Semiconductor substrate having a gettering layer
AssigneesMitsubishi Materials Silicon Corporation, Mitsubishi Materials Corporation, Mitsubishi Denki Kabushiki Kaisha
InventorsMakoto Imura, Kenji Kusakabe
Life of this patent
Estimating the term…
Abstract
A silicon wafer having a low concentration of carbon and a silicon wafer having a high concentration of carbon are joined and polished to prescribed thicknesses to form a semiconductor substrate according to the present invention.
Claims2
A semiconductor substrate, comprising:
- a first single crystalline silicon layer having a main surface where a semiconductor element is formed and a junction surface on an opposite surface of said first single crystal silicon layer to the main surface, and having a first substantially uniform concentration of carbon throughout;
- and
- a second single crystalline silicon layer having a junction surface which is joined to said junction surface of said first single crystalline silicon layer so as to form a junction interface between said first and second single crystalline silicon layers, said second single crystalline layer having a second substantially uniform concentration of carbon throughout, which second substantially uniform centration of carbon is higher than said first substantially uniform concentration of carbon.
Dependencies are inferred from the claim text.