Semiconductor device and method for fabricating same

A method for fabricating a semiconductor device having an IC chip with a thickness of equal to or less than 100 μm, the method comprising steps of:

• preparing a silicon semiconductor substrate with a thickness of equal to or less than 95 μm, wherein bulk micro defects are formed up to the surface of the silicon semiconductor substrate;
• and
• epitaxial-growing a silicon layer with a thickness of approximately 5 μm on the silicon semiconductor substrate.

A method for fabricating a semiconductor device having an IC chip with a thickness of equal to or less than 100 μm, the method comprising steps of:

• preparing a silicon semiconductor substrate with a thickness of equal to or less than 95 μm, wherein bulk micro defects are formed up to the surface of the silicon semiconductor substrate;
• and
• sticking a silicon substrate with a thickness of approximately 5 μm on the silicon semiconductor substrate.

A method for fabricating a semiconductor device having an IC chip with a thickness of equal to or less than 100 μm, the method comprising forming a gettering site for gettering of a metal impurity at the depth of approximately 5 μm from a surface of a semiconductor substrate.

An IC card having an IC chip with a thickness of equal to or less than 100 μm, comprising a semiconductor substrate, wherein:

• a device forming region is within the depth of approximately equal to or less than 5 μm from a surface of the semiconductor substrate, a total thickness of the semiconductor substrate being from 5 μm to 100 μm;
• and
• is a gettering site for carrying out gettering of metal impurities is provided immediately under the device forming region.