Y10S 257/902
Fet with metal source region
Official title: FET with metal source region
Y10S257/902 (Fet with metal source region) appears on 45 US grants and 24 published applications in this corpus.
Search patents in Y10S- Granted patents
- 45
- Published applications
- 24
- Assignees
- 29
- Inventors
- 61
- Latest grant
- 10 May 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 2 |
| 2003 | 1 | 2 |
| 2004 | 3 | 1 |
| 2005 | 0 | 2 |
| 2006 | 1 | 0 |
| 2007 | 2 | 1 |
| 2008 | 1 | 3 |
| 2009 | 2 | 3 |
| 2010 | 2 | 2 |
| 2011 | 3 | 3 |
| 2012 | 3 | 2 |
| 2013 | 0 | 1 |
| 2014 | 2 | 1 |
| 2015 | 2 | 1 |
| 2016 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Butted contact shape to improve SRAM leakage current10 May 2016US 9,337,205 B2Taiwan Semiconductor Manufacturing Company.Ltd
- JFET devices with increased barrier height and methods of making same1 Dec 2015US 9,202,871 B2Micron Technology, Inc.
- Butted contact shape to improve SRAM leakage current14 Apr 2015US 9,006,826 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thin film metal-dielectric-metal transistor19 Aug 2014US 8,809,861 B2Stmicroelectronics Pte Ltd
- JFET devices with increased barrier height and methods of making the same13 May 2014US 8,723,235 B2Micron Technology, Inc.
- Butted contact shape to improve sram leakage current9 Jul 2015US 2015/0194432 A1Taiwan Semiconductor Manufacturing Company.Ltd
- JFET Devices with Increased Barrier Height and Methods of Making Same4 Sep 2014US 2014/0246680 A1Micron Technology, Inc.
- Butted contact shape to improve sram leakage current14 Nov 2013US 2013/0299905 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Thin film metal-dielectric-metal transistor5 Jul 2012US 2012/0168754 A1Stmicroelectronics Pte Ltd
- Jfet devices with increased barrier height and methods of making the same14 Jun 2012US 2012/0146049 A1Micron Technology, Inc.
Most cited
By later US patents
- Schottky barrier MOSFET systems and fabrication thereof94US 5,663,584 A1997
- Method for manufacturing a semiconductor device utilizing self-aligned silicide regions71US 4,622,735 ATokyo Shibaura Denki Kabushiki Kaisha · 1986
- Semiconductor device and method of fabricating same39US 6,303,415 B1Semiconductor Energy Laboratory Co.Ltd. · 2001
- Electrical contact connected with a semiconductor region which is short circuited with the substrate through said region34US 4,271,424 AFujitsu Limited · 1981
- Semiconductor device29US 5,040,034 ANissan Motor Co., Ltd. · 1991