JFET devices with increased barrier height and methods of making the same
AssigneeMicron Technology, Inc.
InventorChandra Mouli
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Abstract
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors with a higher diode turn-on voltage. For example, one or more embodiments include a JFET with a doped silicon-carbide gate, while other embodiments include a JFET with a metal gate. One or more embodiments also relate to systems and devices in which the improved JFET may be employed, as well as methods of manufacturing the improved JFET.
Claims17
A transistor, comprising:
- a semiconductor substrate comprising a source region and a drain region;
- a channel formed in the semiconductor substrate between the source region and the drain region, the channel configured to pass current between the source region and the drain region, wherein the channel is doped to a concentration of less than 1.0e16 atoms per cubic centimeter or the channel is undoped or intrinsic;
- and
- a gate comprising a metal formed directly on a top surface of the semiconductor substrate over the channel;
- wherein a Schottky barrier is formed between the gate and the channel;
- and
- wherein:
- the channel is n-type and the metal comprises palladium, nickel, tungsten, or molybdenum, or a silicide of palladium, nickel, tungsten, or molybdenum;
- Or
- the channel is p-type and the metal comprises magnesium, tantalum, hathium, or a silicide of magnesium, tantalum, or hafnium;
- or
- the channel is undoped or intrinsic and the metal comprises palladium, nickel, magnesium, tantalum, hafnium, tungsten, or molybdenum, or a silicide of any of these.
A method of fabricating a transistor, comprising
- providing a channel in a semiconductor substrate, wherein the channel is undoped or intrinsic;
- and
- forming a metal gate directly on top of the channel;
- wherein the bandgap of the semiconductor substrate and the work function of the metal are selected to form a Schottky barrier.
A transistor, comprising:
- a semiconductor substrate comprising a source region and a drain region;
- a channel formed in the semiconductor substrate between the source region and the drain region, the channel configured to pass current between the source region and the drain region, wherein the channel comprises a channel material that is doped to a concentration of less than 1.0e16 atoms per cubic centimeter or is undoped or intrinsic;
- and
- a gate formed directly on a top surface of the semiconductor substrate over the channel, the gate comprising a gate material;
- wherein a bandgap of the gate material is higher than a bandgap of the channel material;
- and
- wherein:
- the channel is n-type and the gate material comprises palladium, nickel, tungsten, or molybdenum, or a silicide of palladium, nickel, tungsten, or molybdenum;
- or
- the channel is p-type and the gate material comprises magnesium, tantalum, hafnium, or a silicide of magnesium, tantalum, or hafnium;
- or
- the channel is undoped or intrinsic and the gate material comprises palladium, nickel, magnesium, tantalum, hafnium, tungsten, or molybdenum, or a silicide of any of these.
Dependencies are inferred from the claim text.