Jfet devices with increased barrier height and methods of making the same
AssigneeMicron Technology, Inc.
InventorChandra Mouli
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Abstract
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors with a higher diode turn-on voltage. For example, one or more embodiments include a JFET with a doped silicon-carbide gate, while other embodiments include a JFET with a metal gate. One or more embodiments also relate to systems and devices in which the improved JFET may be employed, as well as methods of manufacturing the improved JFET.
Claims20
A transistor, comprising:
- a semiconductor substrate comprising a source region and a drain region;
- a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region configured to pass current between the source region and the drain region, wherein the channel region is doped to a concentration of less than 1.0e16 atoms per cubic centimeter;
- and
- a gate comprising a metal formed directly on a top surface of the semiconductor substrate over the channel region;
- wherein a Schottky barrier is formed between the gate and the channel region.
A method of fabricating a transistor, comprising
- forming a channel region in a semiconductor substrate, wherein the channel region is doped to a concentration of less than 1.0e16 atoms per cubic centimeter;
- and
- forming a metal gate directly on top of the channel region;
- wherein the bandgap of the semiconductor substrate and the work function of the metal are selected to form a Schottky barrier.
A transistor, comprising:
- a semiconductor substrate comprising a source region and a drain region;
- a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region configured to pass current between the source region and the drain region, wherein the channel region comprises a channel material that is doped to a concentration of less than 1.0e16 atoms per cubic centimeter;
- and
- a gate formed directly on a top surface of the semiconductor substrate over the channel region, the gate comprising a gate material;
- wherein a bandgap of the gate material is higher than a bandgap of the channel material.
Dependencies are inferred from the claim text.