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US 8,809,861 B2Granted
Thin film metal-dielectric-metal transistor
AssigneeStmicroelectronics Pte Ltd
InventorsOlivier Le Neel, Ravi Shankar, Calvin Leung
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Abstract
A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.
Claims14
A device comprising:
- a first dielectric layer;
- a thin film layer of chromium silicon on the first dielectric layer;
- a source electrode coupled to the thin film layer of chromium silicon;
- a drain electrode coupled to the thin film layer of chromium silicon, wherein the thin film layer of chromium silicon is positioned on a to surface of the source electrode d on a top surface of the drain electrode;
- a gate electrode above the first dielectric;
- and
- a gate dielectric between the thin film layer of chromium silicon and the gate electrode and overlying the thin film layer of chromium silicon, the source electrode, and the drain electrode.
4 more elements
A method comprising:
- passing a current between a source electrode and a drain electrode through a thin film layer of chromium silicon overlying the source and drain electrodes;
- and
- applying a first control voltage to a gate electrode to substantially stop the current, the gate electrode being separated from the thin film layer of chromium silicon by a gate dielectric, the gate dielectric overlying the source electrode, the drain electrode, and the thin film layer of chromium silicon.
A method comprising:
- forming a source electrode above a dielectric substrate;
- forming a drain electrode above the dielectric substrate;
- forming a thin film layer of chromium silicon above the dielectric substrate, on a top surface of the source electrode, and on a top surface of the drain electrode;
- forming a gate electrode above the dielectric substrate;
- and
- forming a gate dielectric between the thin film layer of chromium silicon and the gate electrode, the gate electrode being electrically insulated from the thin film layer of chromium silicon.
3 more elements
Dependencies are inferred from the claim text.