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US 2012/0168754 A1Published application
Thin film metal-dielectric-metal transistor
AssigneeStmicroelectronics Pte Ltd
InventorsOlivier Le Neel, Ravi Shankar, Calvin Leung
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Abstract
A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.
Claims18
A device comprising:
- a first dielectric layer;
- a thin film layer of chromium silicon on the first dielectric layer;
- a source electrode coupled to the thin film layer of chromium silicon;
- a drain electrode coupled to the thin film layer of chromium silicon;
- a gate electrode above the first dielectric;
- and
- a gate dielectric between the thin film layer of chromium silicon and the gate electrode.
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A method comprising:
- passing a current through a thin film layer of chromium silicon;
- and
- applying a first control voltage to a gate electrode to substantially stop the current, the gate electrode being separated from the thin film layer of chromium silicon by a gate dielectric.
A method comprising:
- forming a thin film layer of chromium silicon above a dielectric substrate;
- forming a gate electrode above the dielectric substrate;
- forming a gate dielectric between the thin film layer of chromium silicon and the gate electrode, the gate electrode being electrically insulated from the thin film layer of chromium silicon;
- forming a source electrode electrically connected to the thin film layer of chromium silicon;
- forming a drain electrode electrically connected to the film layer of chromium silicon;
- applying a bias voltage to the drain electrode;
- and
- applying a control voltage to the gate electrode to control a conductivity of the thin film layer of chromium silicon.
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Dependencies are inferred from the claim text.