Y10S 257/916

Narrow band gap semiconductor material, <<1ev

Y10S257/916 (Narrow band gap semiconductor material, <<1ev) appears on 50 US grants and 10 published applications in this corpus.

Search patents in Y10S
Granted patents
50
Published applications
10
Assignees
29
Inventors
95
Latest grant
1 May 2018

Filings by year

Y10S 257/916: granted patents and published applications per publication year
YearGranted patentsPublished applications
197710
197800
197900
198000
198110
198200
198300
198410
198520
198610
198720
198830
198910
199020
1991120
199220
199310
199430
199500
199610
199700
199800
199910
200020
200120
200211
200321
200411
200513
200610
200720
200801
200911
201000
201111
201200
201311
201400
201500
201600
201700
201810

By publication year. Applications have been published since 2001.