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US 9,960,079 B2Granted
Passive within via
AssigneeIntel Corporation
InventorsTodd B. Myers, Nicholas R. Watts, Eric C. Palmer, Jui Min Lim
Life of this patent
Estimating the term…
Abstract
A method of forming a device associated with a via includes forming an opening or via, and forming at least a pair of conducting paths within the via. Also disclosed is a via having at pair of conducting paths therein.
Claims11
A method comprising:
- forming a via in a substrate to expose a first conductive layer in the substrate, wherein the via comprises at least one sidewall and a bottom forming an inner surface of the via and wherein the first conductive layer is exposed at the via bottom;
- and
- forming at least a portion of an electrical component in the via in the substrate;
- wherein forming at least a portion of an electrical component in the via includes:
- depositing a first plate of conductive material on the inner surface of the via, such that the deposited first plate of conductive material resides only within the via and abuts the first conductive layer;
- removing a portion of the deposited first plate of conductive material within the via to expose a portion of the at least one via sidewall and to expose a portion of the via bottom;
- depositing a dielectric material onto the remaining portion of the first plate of conductive material and onto the inner surface of the via;
- removing a portion of the dielectric material to expose another portion of the at least one via sidewall and to expose another portion of the via bottom;
- and
- depositing a second plate of conductive material abutting the dielectric material and abutting the substrate.
7 more elements
A method comprising:
- forming a via in a substrate to expose a first conductive layer in the substrate, wherein the via comprises at least one sidewall and a bottom forming an inner surface of the via and wherein the first conductive layer is exposed at the via bottom;
- depositing a first plate of conductive material on the inner surface of the via, such that the deposited first layer of conductive material resides only within the via and abuts the first conductive layer;
- removing a portion of the deposited first plate of conductive material within the via to expose a portion of the at least one via sidewall and to expose a portion of the via bottom;
- depositing a dielectric material onto the remaining portion of the first plate of conductive material and onto the inner surface of the via;
- removing a portion of the dielectric material to expose another portion of the at least one via sidewall and to expose another portion of the via bottom;
- and
- depositing a second plate of conductive material abutting the dielectric material and abutting the substrate.
4 more elements
Dependencies are inferred from the claim text.