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US 8,487,446 B2Granted
Method of embedding passive component within via
AssigneeIntel Corporation
InventorsTodd B Myers, Nicolas R Watts, Eric C Palmer, Jui Min Lim
Life of this patent
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Abstract
A method of forming a device associated with a via includes forming an opening or via, and forming at least a pair of conducting paths within the via. Also disclosed is a via having at pair of conducting paths therein.
Claims11
A device comprising:
- a first conductive layer;
- a second conductive layer;
- a dielectric material formed between the first conductive layer and the second conductive layer;
- an opening extending through a portion of the dielectric material, wherein the opening further comprises:
- a first metal layer located on a first portion of the opening;
- and
- a second metal layer located on a second portion of the opening, wherein the first metal layer electrically connects a first portion of the first conductive layer to a first portion of the second conductive layer and wherein the second metal layer electrically connects a second portion of the first conductive layer to a second portion of the second conductive layer through the opening in the dielectric material and wherein the second metal layer is electrically isolated from the first metal layer.
4 more elements
Dependencies are inferred from the claim text.